Catálogo de publicaciones - revistas
Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
No disponibles.
Historia
Continúa: Chinese Physics
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Coadsorption of gold with chlorine on CeO 2 (111) surfaces: A first principles study
Zhan-Sheng Lu; Bing-Ling He; Dong-Wei Ma; Zong-Xian Yang
Palabras clave: General Physics and Astronomy.
Pp. 026801
Effect of the thickness of InGaN interlayer on a -plane GaN epilayer
Jian-Xia Wang; Lian-Shan Wang; Qian Zhang; Xiang-Yue Meng; Shao-Yan Yang; Gui-Juan Zhao; Hui-Jie Li; Hong-Yuan Wei; Zhan-Guo Wang
Palabras clave: General Physics and Astronomy.
Pp. 026802
Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values
Xiao-Hua Ma; Ya-Man Zhang; Xin-Hua Wang; Ting-Ting Yuan; Lei Pang; Wei-Wei Chen; Xin-Yu Liu
Palabras clave: General Physics and Astronomy.
Pp. 027101
Localization correction to the anomalous Hall effect in amorphous CoFeB thin films
Jin-Jun Ding; Shao-Bing Wu; Xiao-Fei Yang; Tao Zhu
Palabras clave: General Physics and Astronomy.
Pp. 027201
Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes
Pin-Zhi Wang; Su-Hua Zhu; Tao Pan; Yin-Zhong Wu
Palabras clave: General Physics and Astronomy.
Pp. 027301
Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
Xue-Feng Zheng; Shuang Fan; Yong-He Chen; Di Kang; Jian-Kun Zhang; Chong Wang; Jiang-Hui Mo; Liang Li; Xiao-Hua Ma; Jin-Cheng Zhang; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 027302
Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment
Min-Han Mi; Kai Zhang; Sheng-Lei Zhao; Chong Wang; Jin-Cheng Zhang; Xiao-Hua Ma; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 027303
Morphology-controlled preparation of tungsten oxide nanostructures for gas-sensing application
Yu-Xiang Qin; Chang-Yu Liu; Yang Liu
Palabras clave: General Physics and Astronomy.
Pp. 027304
Synthesis and electrical properties of In 2 O 3 (ZnO) m
Xin-Yue Tang; Hong Gao; Li-Li Wu; Jing Wen; Si-Ming Pan; Xin Liu; Xi-Tian Zhang
Palabras clave: General Physics and Astronomy.
Pp. 027305
Evolution of the 128-cm −1 Raman phonon mode with temperature in Ba(Fe 1– x Co
Yan-Xing Yang; Yann Gallais; Zhi-Hao Fang; Jing Shi; Rui Xiong
Palabras clave: General Physics and Astronomy.
Pp. 027401