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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

Tabla de contenidos

Synthesis and electrochemical properties of three-dimensional graphene/polyaniline composites for supercapacitor electrode materials

Wen Zhao; Da-Wei He; Yong-Sheng Wang; Xiang Du; Hao Xin

Palabras clave: General Physics and Astronomy.

Pp. 047204

Decrease of back recombination rate in CdS quantum dots sensitized solar cells using reduced graphene oxide

Ali Badawi

Palabras clave: General Physics and Astronomy.

Pp. 047205

Room-temperature terahertz detection based on CVD graphene transistor

Xin-Xin Yang; Jian-Dong Sun; Hua Qin; Li Lv; Li-Na Su; Bo Yan; Xin-Xing Li; Zhi-Peng Zhang; Jing-Yue Fang

Palabras clave: General Physics and Astronomy.

Pp. 047206

Enhanced surface plasmon interference lithography from cavity resonance in the grating slits

Kai Guo; Jian-Long Liu; Ke-Ya Zhou; Shu-Tian Liu

Palabras clave: General Physics and Astronomy.

Pp. 047301

Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

Morteza Charmi

Palabras clave: General Physics and Astronomy.

Pp. 047302

Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application

Jin-Rong Ma; Qiao Ming; Bo Zhang

Palabras clave: General Physics and Astronomy.

Pp. 047303

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer

Peng-Cheng Li; Luo Xiao-Rong; Yin-Chun Luo; Kun Zhou; Xian-Long Shi; Yan-Hui Zhang; Meng-Shan Lv

Palabras clave: General Physics and Astronomy.

Pp. 047304

Perfect GMR effect in gapped graphene-based ferromagnetic–normal–ferromagnetic junctions

Hossein Karbaschi; Gholam Reza Rashedi

Palabras clave: General Physics and Astronomy.

Pp. 047305

Two-electron localization in a quantum dot molecule driven by a cosine squared field

Guang-Hui Zhong; Li-Min Wang

Palabras clave: General Physics and Astronomy.

Pp. 047306

Thermal and thermoelectric response from Keldysh formalism with application to gapped Dirac fermions

Guo-Bao Zhu; Hui-Min Yang; Sheng-Yuan Yang

Palabras clave: General Physics and Astronomy.

Pp. 047401