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Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
No disponibles.
Historia
Continúa: Chinese Physics
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Photoactive area modification in bulk heterojunction organic solar cells using optimization of electrochemically synthesized ZnO nanorods
Mehdi Ahmadi; Sajjad Rashidi Dafeh
Palabras clave: General Physics and Astronomy.
Pp. 117203
Transport properties of zigzag graphene nanoribbons adsorbed with single iron atom
Yu-E Yang; Yang Xiao; Xiao-Hong Yan; Chang-Jie Dai
Palabras clave: General Physics and Astronomy.
Pp. 117204
Surface states in crystals with low-index surfaces
Hui-Ping Wang; Rui-Bao Tao
Palabras clave: General Physics and Astronomy.
Pp. 117301
Electron Raman scattering in semiconductor quantum well wire of cylindrical ring geometry
Re. Betancourt-Riera; Ri. Betancourt-Riera; J. M. Nieto Jalil; R. Riera
Palabras clave: General Physics and Astronomy.
Pp. 117302
Dynamic responses of series parallel-plate mesoscopic capacitors to time-dependent external voltage
Jin-Hua Wang; Jun Quan
Palabras clave: General Physics and Astronomy.
Pp. 117303
Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface
Chao Han; Yu-Ming Zhang; Qing-Wen Song; Xiao-Yan Tang; Yi-Men Zhang; Hui Guo; Yue-Hu Wang
Palabras clave: General Physics and Astronomy.
Pp. 117304
Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
Jun Luo; Sheng-Lei Zhao; Min-Han Mi; Bin Hou; Xiao-Lei Yang; Jin-Cheng Zhang; Xiao-Hua Ma; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 117305
Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k /metal gate last process
Yan-Rong Wang; Hong Yang; Hao Xu; Xiao-Lei Wang; Wei-Chun Luo; Lu-Wei Qi; Shu-Xiang Zhang; Wen-Wu Wang; Jiang Yan; Hui-Long Zhu; Chao Zhao; Da-Peng Chen; Tian-Chun Ye
Palabras clave: General Physics and Astronomy.
Pp. 117306
AlGaN/GaN high electron mobility transistor with Al 2 O 3 +BCB passivation
Sheng Zhang; Ke Wei; Le Yu; Guo-Guo Liu; Sen Huang; Xin-Hua Wang; Lei Pang; Ying-Kui Zheng; Yan-Kui Li; Xiao-Hua Ma; Bing Sun; Xin-Yu Liu
Palabras clave: General Physics and Astronomy.
Pp. 117307
Electronic properties of the SnSe–metal contacts: First-principles study
Xian-Qi Dai; Xiao-Long Wang; Wei Li; Tian-Xing Wang
Palabras clave: General Physics and Astronomy.
Pp. 117308