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Chinese Physics B

Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.
Palabras clave – provistas por la editorial

No disponibles.

Historia

Continúa: Chinese Physics

Disponibilidad
Institución detectada Período Navegá Descargá Solicitá
No detectada desde ene. 2008 / hasta dic. 2023 IOPScience

Información

Tipo de recurso:

revistas

ISSN impreso

1674-1056

Editor responsable

Chinese Physical Society (CPS)

País de edición

China

Fecha de publicación

Cobertura temática

fisica

Ciencias físicas

Tabla de contenidos

doi: 10.1088/1674-1056/24/12/126701

Interfacial and electrical characteristics of a HfO 2 /n–InAlAs MOS-capacitor with different dielectric thicknesses

He Guan; Hong-Liang Lv; Hui Guo; Yi-Men Zhang; Yu-Ming Zhang; Li-Fan Wu

Palabras clave: General Physics and Astronomy.

Pp. 126701

doi: 10.1088/1674-1056/24/12/126801

Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H–SiC

Tian-Yu Zhou; Xue-Chao Liu; Wei Huang; Shi-Yi Zhuo; Yan-Qing Zheng; Er-Wei Shi

Palabras clave: General Physics and Astronomy.

Pp. 126801

doi: 10.1088/1674-1056/24/12/127101

First-principles calculation of the electronic structure, chemical bonding, and thermodynamic properties of β -US 2

Shi-Chang Li; Yuan-Lei Zheng; Sheng-Gui Ma; Tao Gao; Bing-Yun Ao

Palabras clave: General Physics and Astronomy.

Pp. 127101

doi: 10.1088/1674-1056/24/12/127301

Spin-valley quantum Hall phases in graphene

Hong-Yu Tian

Palabras clave: General Physics and Astronomy.

Pp. 127301

doi: 10.1088/1674-1056/24/12/127302

Spoof surface plasmons resonance effect and tunable electric response of improved metamaterial in the terahertz regime

Yue Wang; Li-Ying Zhang; Jin-Shuo Mei; Wen-Chao Zhang; Yi-Jing Tong

Palabras clave: General Physics and Astronomy.

Pp. 127302

doi: 10.1088/1674-1056/24/12/127303

Shape effects on the ground-state energy of a three-electron quantum dot

Z. D. Vatansever; S. Sakiroglu; İ. Sokmen

Palabras clave: General Physics and Astronomy.

Pp. 127303

doi: 10.1088/1674-1056/24/12/127304

High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3 -plasma surface pretreatment

Chao-Wen Liu; Jing-Ping Xu; Lu Liu; Han-Han Lu

Palabras clave: General Physics and Astronomy.

Pp. 127304

doi: 10.1088/1674-1056/24/12/127305

Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last proc

Lu-Wei Qi; Hong Yang; Shang-Qing Ren; Ye-Feng Xu; Wei-Chun Luo; Hao Xu; Yan-Rong Wang; Bo Tang; Wen-Wu Wang; Jiang Yan; Hui-Long Zhu; Chao Zhao; Da-Peng Chen; Tian-Chun Ye

Palabras clave: General Physics and Astronomy.

Pp. 127305

doi: 10.1088/1674-1056/24/12/127306

Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Peng Zhang; Sheng-Lei Zhao; Jun-Shuai Xue; Jie-Jie Zhu; Xiao-Hua Ma; Jin-Cheng Zhang; Yue Hao

Palabras clave: General Physics and Astronomy.

Pp. 127306

doi: 10.1088/1674-1056/24/12/127307

Structures and electrical properties of pure and vacancy-included ZnO NWs of different sizes

Xiao-Xia Yu; Yan Zhou; Jia Liu; Hai-Bo Jin; Xiao-Yong Fang; Mao-Sheng Cao

Palabras clave: General Physics and Astronomy.

Pp. 127307