Catálogo de publicaciones - revistas
Chinese Physics B
Resumen/Descripción – provisto por la editorial en inglés
Chinese Physics B covers the latest developments and achievements in all branches of physics. Articles, including papers and rapid communications, are those approved as creative contributions to the whole discipline of physics and of significance to their own fields.Palabras clave – provistas por la editorial
No disponibles.
Historia
Continúa: Chinese Physics
Disponibilidad
| Institución detectada | Período | Navegá | Descargá | Solicitá |
|---|---|---|---|---|
| No detectada | desde ene. 2008 / hasta dic. 2023 | IOPScience |
Información
Tipo de recurso:
revistas
ISSN impreso
1674-1056
Editor responsable
Chinese Physical Society (CPS)
País de edición
China
Fecha de publicación
2008-
Cobertura temática
Tabla de contenidos
Evaluation of electrical and optical characteristics of ZnO/CdS/CIS thin film solar cell
Hadi Zarei; Rasoul Malekfar
Palabras clave: General Physics and Astronomy.
Pp. 027103
Electronegativity explanation on the efficiency-enhancing mechanism of the hybrid inorganic–organic perovskite ABX 3 from firs
Qing-Yuan Chen; Yang Huang; Peng-Ru Huang; Tai Ma; Chao Cao; Yao He
Palabras clave: General Physics and Astronomy.
Pp. 027104
Current-induced nonequilibrium spin polarization in semiconductor-nanowire/s-wave superconductor junctions with strong spin–orbit coupling
Nai-Qing Liu; Li-Jie Huang; Rui-Qiang Wang; Liang-Bin Hu
Palabras clave: General Physics and Astronomy.
Pp. 027201
Infrared laser-induced fast photovoltaic effect observed in orthorhombic tin oxide film
Song-Qing Zhao; Ji-Rui Zhang; Hong-Jie Shi; Kun-Kun Yan; Chun Huang; Li-Min Yang; Rui Yang; Kun Zhao
Palabras clave: General Physics and Astronomy.
Pp. 027202
Polarization-independent terahertz wave modulator based on graphene-silicon hybrid structure
Liang-Liang Du; Quan Li; Shao-Xian Li; Fang-Rong Hu; Xian-Ming Xiong; Yan-Feng Li; Wen-Tao Zhang; Jia-Guang Han
Palabras clave: General Physics and Astronomy.
Pp. 027301
Quantum information transfer between topological and conventional charge qubits
Jun Li; Yan Zou
Palabras clave: General Physics and Astronomy.
Pp. 027302
Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
Jun Luo; Sheng-Lei Zhao; Min-Han Mi; Wei-Wei Chen; Bin Hou; Jin-Cheng Zhang; Xiao-Hua Ma; Yue Hao
Palabras clave: General Physics and Astronomy.
Pp. 027303
Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co 2 MnSi/graphene/n-Ge junction
Gui-fang Li; Jing Hu; Hui Lv; Zhijun Cui; Xiaowei Hou; Shibin Liu; Yongqian Du
Palabras clave: General Physics and Astronomy.
Pp. 027304
Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance
Yu-Ru Wang; Yi-He Liu; Zhao-Jiang Lin; Dong Fang; Cheng-Zhou Li; Ming Qiao; Bo Zhang
Palabras clave: General Physics and Astronomy.
Pp. 027305
A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology
Yan-Hui Zhang; Jie Wei; Chao Yin; Qiao Tan; Jian-Ping Liu; Peng-Cheng Li; Xiao-Rong Luo
Palabras clave: General Physics and Astronomy.
Pp. 027306